STP3NK50Z, МОП-транзистор, N Канал, 2.3 А, 500 В, 2.8 Ом, 10 В, 3.75 В, ST Microelectronics - характеристики, поставщики, цена.

Последняя цена 140 руб.

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Информация

Производитель

ST Microelectronics

Артикул

STP3NK50Z

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1388048

Технические параметры

Maximum Operating Temperature

+150 °C

Package Type

TO220AB

Высота

15.75мм

Length

10.4мм

Brand

STMicroelectronics

Series

STP3NK50Z

Pin Count

Typical Gate Charge @ Vgs

11 нКл при 10 В

Maximum Gate Source Voltage

±30 V

Mounting Type

Поверхностный монтаж

Package / Case

TO-220-3

Technology

Transistor Configuration

Одинарный

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

Rds On - Drain-Source Resistance

2.8 Ohms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

500 V

Vgs - Gate-Source Voltage

30 V

Number of Elements per Chip

Maximum Continuous Drain Current

2.3 A

Maximum Power Dissipation

45 Вт

Minimum Operating Temperature

-55 °C

Width

4.6мм

Maximum Drain Source Resistance

3.3 Ω

Maximum Drain Source Voltage

500 V

Channel Mode

Поднятие

Channel Type

Configuration

Single

Packaging

Tube

Product Category

MOSFET

Forward Diode Voltage

1.6V

Typical Turn-On Delay Time

8 ns

Typical Turn-Off Delay Time

24 ns

Factory Pack Quantity

1000

Fall Time

14 ns

Forward Transconductance - Min

1.5 S

Id - Continuous Drain Current

2.3 A

Manufacturer

STMicroelectronics

Mounting Style

Through Hole

Number Of Channels

1 Channel

Pd - Power Dissipation

45 W

Product Type

MOSFET

Qg - Gate Charge

15 nC

Rise Time

13 ns

Subcategory

MOSFETs

Tradename

SuperMESH

Transistor Type

1 N-Channel

Unit Weight

0.063493 oz

Vgs Th - Gate-Source Threshold Voltage

3 V

Техническая документация

Datasheet , pdf , 603 КБ

STP3NK50Z, МОП-транзистор, N Канал, 2.3 А, 500 В, 2.8 Ом, 10 В, 3.75 В - характеристики, поставщики

Последняя цена 140 руб.

Техническая документация