STP12N65M5, Транзистор MOSFET N-канал 650В 8.5А [TO-220AB], ST Microelectronics - характеристики, поставщики, цена.

Последняя цена 205 руб.

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Информация

Производитель

ST Microelectronics

Артикул

STP12N65M5

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1804836

Технические параметры

Вес, г

3.5

Pin Count

Number of Elements per Chip

Channel Mode

Enhancement

Channel Type

Configuration

Single

ECCN (US)

EAR99

EU RoHS

Compliant with Exemption

Lead Shape

Through Hole

Maximum Continuous Drain Current (A)

8.5

Maximum Drain Source Resistance (mOhm)

430@10V

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation (mW)

70000

Minimum Operating Temperature (°C)

-55

Mounting

Through Hole

Packaging

Tube

Part Status

Active

PCB changed

Product Category

Power MOSFET

Standard Package Name

TO-220

Supplier Package

TO-220

Typical Input Capacitance @ Vds (pF)

900@100V

Typical Gate Charge @ Vgs (nC)

20@10V

Typical Gate Charge @ 10V (nC)

Typical Fall Time (ns)

23.4

Typical Rise Time (ns)

17.6

Typical Turn-Off Delay Time (ns)

15.6

Typical Turn-On Delay Time (ns)

22.6

Automotive

Military

Package Height

9.15(Max)

Package Length

10.4(Max)

Package Width

4.6(Max)

Tab

Process Technology

MDmesh

Material

Техническая документация

stf12n65m , pdf , 1078 КБ
Datasheet STP12N65M5 , pdf , 1107 КБ

STP12N65M5, Транзистор MOSFET N-канал 650В 8.5А [TO-220AB] - характеристики, поставщики

Последняя цена 205 руб.

Техническая документация