STD13NM60N, Транзистор, ST Microelectronics - характеристики, поставщики, цена.

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Информация

Производитель

ST Microelectronics

Артикул

STD13NM60N

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1807937

Технические параметры

Вес, г

0.449

Pin Count

Number of Elements per Chip

Channel Mode

Enhancement

Channel Type

Configuration

Single

ECCN (US)

EAR99

EU RoHS

Compliant with Exemption

Lead Shape

Gull-wing

Maximum Continuous Drain Current (A)

Maximum Drain Source Resistance (mOhm)

360@10V

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±25

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation (mW)

90000

Minimum Operating Temperature (°C)

-55

Mounting

Surface Mount

Packaging

Tape and Reel

Part Status

Active

PCB changed

Product Category

Power MOSFET

Standard Package Name

TO-252

Supplier Package

DPAK

Typical Input Capacitance @ Vds (pF)

790@50V

HTS

8541.29.00.95

Typical Gate Charge @ Vgs (nC)

27@10V

Typical Gate Charge @ 10V (nC)

Typical Fall Time (ns)

Typical Rise Time (ns)

Typical Turn-Off Delay Time (ns)

Typical Turn-On Delay Time (ns)

Automotive

Military

Package Height

2.4(Max)

Package Length

6.6(Max)

Package Width

6.2(Max)

Tab

Process Technology

MDmesh II

Maximum Gate Threshold Voltage (V)

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

Техническая документация

Datasheet STD13NM60N , pdf , 1171 КБ

STD13NM60N, Транзистор - характеристики, поставщики

Последняя цена 650 руб.

Техническая документация