STB26NM60N транзистор, N-Channel MOSFET, 20 A, 600 V, 3-Pin D2PAK, ST Microelectronics - характеристики, поставщики, цена.

Последняя цена 290 руб.

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Описание

N-Channel MDmesh ™, 600 В / 650 В, STMicroelectronics

Информация

Производитель

ST Microelectronics

Артикул

STB26NM60N транзистор

P/N

STB26NM60N

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1743033

Технические параметры

Maximum Operating Temperature

+150 °C

Package Type

D2PAK (TO-263)

Transistor Material

Length

10.75mm

Brand

STMicroelectronics

Series

MDmesh

Pin Count

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Gate Source Voltage

-25 V, +25 V

Mounting Type

Surface Mount

Transistor Configuration

Single

Maximum Gate Threshold Voltage

Minimum Gate Threshold Voltage

Number of Elements per Chip

Maximum Continuous Drain Current

20 A

Maximum Power Dissipation

140 W

Width

10.4mm

Height

4.6mm

Maximum Drain Source Resistance

165 mΩ

Maximum Drain Source Voltage

600 V

Channel Mode

Enhancement

Channel Type

STB26NM60N транзистор, N-Channel MOSFET, 20 A, 600 V, 3-Pin D2PAK - характеристики, поставщики

Последняя цена 290 руб.