SI9435BDY-T1-E3, Транзистор TrenchFET P-канал 30В 4.1А [SOIC-8], Vishay - характеристики, поставщики, цена.

Последняя цена 23 руб.

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Описание

МОП-транзистор 30V 5.7A 0.042Ohm

Информация

Производитель

Vishay

Артикул

SI9435BDY-T1-E3

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1791156

Технические параметры

Вес, г

0.15

Pin Count

Number of Elements per Chip

Channel Mode

Enhancement

Channel Type

Configuration

Single Quad Drain Triple Source

ECCN (US)

EAR99

EU RoHS

Compliant

Lead Shape

Gull-wing

Maximum Continuous Drain Current (A)

4.1

Maximum Drain Source Resistance (mOhm)

42@10V

Maximum Drain Source Voltage (V)

Maximum Gate Source Voltage (V)

±20

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation (mW)

2500

Minimum Operating Temperature (°C)

-55

Mounting

Surface Mount

Packaging

Tape and Reel

Part Status

NRND

PCB changed

Product Category

Power MOSFET

Standard Package Name

SOP

Supplier Package

SOIC N

HTS

8541.29.00.95

Typical Gate Charge @ Vgs (nC)

16@10V

Typical Gate Charge @ 10V (nC)

Typical Fall Time (ns)

Typical Rise Time (ns)

Typical Turn-Off Delay Time (ns)

Typical Turn-On Delay Time (ns)

Automotive

Military

Package Height

1.55(Max)

Package Length

5(Max)

Package Width

4(Max)

Process Technology

TrenchFET

Maximum Gate Threshold Voltage (V)

Техническая документация

Datasheet , pdf , 177 КБ
SI9435BDY , pdf , 175 КБ
Datasheet SI9435BDY-T1-E3 , pdf , 807 КБ

SI9435BDY-T1-E3, Транзистор TrenchFET P-канал 30В 4.1А [SOIC-8] - характеристики, поставщики

Последняя цена 23 руб.

Техническая документация