SI4850EY-T1-E3, Транзистор MOSFET N-CH 60В 6А [SOIC-8], Vishay - характеристики, поставщики, цена.

Последняя цена 120 руб.

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Описание

МОП-транзистор 60V Vds 20V Vgs SO-8

Информация

Производитель

Vishay

Артикул

SI4850EY-T1-E3

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1791146

Технические параметры

Вес, г

0.26

Pin Count

Number of Elements per Chip

Channel Mode

Enhancement

Channel Type

Configuration

Single Quad Drain Triple Source

ECCN (US)

EAR99

EU RoHS

Compliant

Lead Shape

Gull-wing

Maximum Continuous Drain Current (A)

Maximum Drain Source Resistance (mOhm)

22@10V

Maximum Drain Source Voltage (V)

Maximum Gate Source Voltage (V)

±20

Maximum Operating Temperature (°C)

175

Maximum Power Dissipation (mW)

3300

Minimum Operating Temperature (°C)

-55

Mounting

Surface Mount

Packaging

Tape and Reel

Part Status

Active

PCB changed

Product Category

Power MOSFET

Standard Package Name

SOP

Supplier Package

SOIC N

HTS

8541.29.00.95

Typical Gate Charge @ Vgs (nC)

18@10V

Typical Gate Charge @ 10V (nC)

Typical Fall Time (ns)

Typical Rise Time (ns)

Typical Turn-Off Delay Time (ns)

Typical Turn-On Delay Time (ns)

Automotive

Military

Package Height

1.55(Max)

Package Length

5(Max)

Package Width

4(Max)

Process Technology

TrenchFET

Maximum Gate Threshold Voltage (V)

Typical Gate to Drain Charge (nC)

5.3

Typical Gate to Source Charge (nC)

3.4

Typical Output Capacitance (pF)

110

Техническая документация

Datasheet , pdf , 179 КБ
SI4850EY , pdf , 249 КБ
Datasheet SI4850EY-T1-E3 , pdf , 247 КБ
Datasheet SI4850EY-T1-E3 , pdf , 180 КБ

SI4850EY-T1-E3, Транзистор MOSFET N-CH 60В 6А [SOIC-8] - характеристики, поставщики

Последняя цена 120 руб.

Техническая документация