SI1012X-T1-GE3, Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R, Vishay - характеристики, поставщики, цена.

Последняя цена 20 руб.

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Информация

Производитель

Vishay

Артикул

SI1012X-T1-GE3

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1525243

Технические параметры

Pin Count

Continuous Drain Current (Id) @ 25В°C

500mA

Power Dissipation-Max (Ta=25В°C)

250mW

Rds On - Drain-Source Resistance

700mО© @ 600mA,4.5V

Transistor Polarity

N Channel

Vds - Drain-Source Breakdown Voltage

20V

Vgs - Gate-Source Voltage

900mV @ 250uA

Number of Elements per Chip

Channel Mode

Enhancement

Channel Type

Configuration

Single

ECCN (US)

EAR99

EU RoHS

Compliant

Maximum Continuous Drain Current (A)

0.5

Maximum Drain Source Resistance (mOhm)

700@4.5V

Maximum Drain Source Voltage (V)

Maximum Gate Source Voltage (V)

±6

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation (mW)

280

Minimum Operating Temperature (°C)

-55

Mounting

Surface Mount

Packaging

Tape and Reel

Part Status

NRND

PCB changed

Product Category

Power MOSFET

Standard Package Name

Supplier Package

SC-89

HTS

8541.29.00.95

Typical Gate Charge @ Vgs (nC)

750@4.5V

Typical Fall Time (ns)

Typical Rise Time (ns)

Typical Turn-Off Delay Time (ns)

Typical Turn-On Delay Time (ns)

Automotive

Military

Package Height

0.8(Max)

Package Length

1.7(Max)

Package Width

0.95(Max)

Process Technology

TrenchFET

Техническая документация

Datasheet , pdf , 167 КБ

SI1012X-T1-GE3, Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R - характеристики, поставщики

Последняя цена 20 руб.

Техническая документация