IPW65R070C6FKSA1, Infineon Technologies - характеристики, поставщики, цена.

Последняя цена 2180 руб.

Сравнить

Описание

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single

N-канал 650V 53,5A (Tc) 391W (Tc) сквозное отверстие PG-TO247-3

Информация

Производитель

Infineon Technologies

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

2410331

Технические параметры

Series

CoolMOSв„ў ->

Base Product Number

IPW65R070 ->

Current - Continuous Drain (Id) @ 25В°C

53.5A (Tc)

Drain to Source Voltage (Vdss)

650V

Drive Voltage (Max Rds On, Min Rds On)

10V

ECCN

EAR99

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

HTSUS

8541.29.0095

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 100V

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Through Hole

Operating Temperature

-55В°C ~ 150В°C (TJ)

Package

Tube

Package / Case

TO-247-3

Power Dissipation (Max)

391W (Tc)

Rds On (Max) @ Id, Vgs

70mOhm @ 17.6A, 10V

REACH Status

REACH Unaffected

RoHS Status

ROHS3 Compliant

Supplier Device Package

PG-TO247-3

Technology

MOSFET (Metal Oxide)

Vgs (Max)

В±20V

Vgs(th) (Max) @ Id

3.5V @ 1.76mA

Техническая документация

Datasheet IPW65R070C6FKSA1 , pdf , 1706 КБ

IPW65R070C6FKSA1 - характеристики, поставщики

Последняя цена 2180 руб.

Техническая документация