TSM4N60ECP ROG, Taiwan Semiconductor - характеристики, поставщики, цена.

Последняя цена 190 руб.

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Описание

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single

N-канал, 600 В, 4 А (Tc) 86,2 Вт (Tc), поверхностный монтаж, TO-252, (D-Pak)

Информация

Производитель

Taiwan Semiconductor

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

2329918

Технические параметры

Base Product Number

TSM4N60 ->

Current - Continuous Drain (Id) @ 25В°C

4A (Tc)

Drain to Source Voltage (Vdss)

600V

Drive Voltage (Max Rds On, Min Rds On)

10V

ECCN

EAR99

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

HTSUS

8541.29.0095

Input Capacitance (Ciss) (Max) @ Vds

545pF @ 25V

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Mounting Type

Surface Mount

Operating Temperature

150В°C (TJ)

Package

Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max)

86.2W (Tc)

Rds On (Max) @ Id, Vgs

2.5Ohm @ 2A, 10V

RoHS Status

ROHS3 Compliant

Supplier Device Package

TO-252, (D-Pak)

Technology

MOSFET (Metal Oxide)

Vgs (Max)

В±30V

Vgs(th) (Max) @ Id

5V @ 250ВµA

TSM4N60ECP ROG - характеристики, поставщики

Последняя цена 190 руб.