MJD200G - характеристики, поставщики

MJD200G

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MJD200G

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Описание

Биполярные транзисторы - BJT

Силовые транзисторы NPN, ON Semiconductor

Информация

Производитель

ON Semiconductor

Категория

Биполярные (BJTs)

Номенклатурный номер

2231291

Технические параметры

Base Product Number

MJD200 ->

Current - Collector (Ic) (Max)

5A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

45 @ 2A, 1V

ECCN

EAR99

Frequency - Transition

65MHz

HTSUS

8541.29.0075

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Поверхностный монтаж

Operating Temperature

-65В°C ~ 150В°C (TJ)

Package

Tube

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max

1.4W

REACH Status

REACH Unaffected

RoHS Status

ROHS3 Compliant

Supplier Device Package

DPAK

Transistor Type

NPN

Vce Saturation (Max) @ Ib, Ic

1.8V @ 1A, 5A

Voltage - Collector Emitter Breakdown (Max)

25V

Maximum Collector Emitter Saturation Voltage

1,8 В пост. тока

Maximum Operating Temperature

+150 °C

Maximum Operating Frequency

10 MHz

Number of Elements per Chip

1

Length

6.73mm

Maximum Collector Base Voltage

40 V dc

Transistor Configuration

Одинарный

Brand

ON Semiconductor

Maximum Collector Emitter Voltage

25 V

Package Type

DPAK (TO-252)

Maximum Power Dissipation

12.5 W

Minimum Operating Temperature

-65 °C

Width

6.22mm

Maximum DC Collector Current

5 А

Height

2.38mm

Pin Count

2

Dimensions

6.73 x 6.22 x 2.38mm

Maximum Emitter Base Voltage

8 V

Minimum DC Current Gain

10

Maximum Base Emitter Saturation Voltage

2.5 V dc

Техническая документация

Datasheet , pdf , 245 КБ