STD2LN60K3, Транзистор N-МОП, полевой, 600В, 1,26А, 45Вт, DPAK - характеристики, поставщики

STD2LN60K3, Транзистор N-МОП, полевой, 600В, 1,26А, 45Вт, DPAK

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STD2LN60K3, Транзистор N-МОП, полевой, 600В, 1,26А, 45Вт, DPAK

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Информация

Производитель

ST Microelectronics

Артикул

STD2LN60K3

Категория

Полевые с управляющим PN-переходом (JFETs)

Номенклатурный номер

2129552

Технические параметры

Вес, г

1.5

Brand

STMicroelectronics

Channel Type

N

Pin Count

3

Configuration

Single

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

Part Status

Active

HTS

8541.29.00.95

Lead Shape

Gull-wing

Package Length

6.6(Max)

Package Width

6.2(Max)

PCB changed

2

Package Height

2.4(Max)

Mounting

Surface Mount

Maximum Drain Source Voltage (V)

600

Maximum Power Dissipation (mW)

45000

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Packaging

Tape and Reel

Supplier Package

DPAK

Standard Package Name

TO-252

Military

No

Package / Case

TO-252-3

Process Technology

SuperMESH

Technology

Si

Number of Elements per Chip

1

Series

STD2LN60K3

Channel Mode

Enhancement

Typical Turn-On Delay Time

10 ns

Typical Turn-Off Delay Time

23.5 ns

Rds On - Drain-Source Resistance

4.5 Ohms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Vgs - Gate-Source Voltage

30 V

Product Category

Power MOSFET

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

2

Maximum Drain Source Resistance (mOhm)

4500@10V

Typical Gate Charge @ Vgs (nC)

12@10V

Typical Gate Charge @ 10V (nC)

12

Typical Input Capacitance @ Vds (pF)

235@50V

Typical Fall Time (ns)

21

Typical Rise Time (ns)

8.5

Typical Turn-Off Delay Time (ns)

23.5

Typical Turn-On Delay Time (ns)

10

Tab

Tab

Maximum Gate Threshold Voltage (V)

4.5

Pd - Power Dissipation

45 W

Factory Pack Quantity

2500

Fall Time

21 ns

Id - Continuous Drain Current

2 A

Manufacturer

STMicroelectronics

Mounting Style

SMD/SMT

Number Of Channels

1 Channel

Product Type

MOSFET

Qg - Gate Charge

12 nC

Rise Time

8.5 ns

Subcategory

MOSFETs

Tradename

SuperMESH

Transistor Type

1 N-Channel

Vgs Th - Gate-Source Threshold Voltage

4.5 V

Unit Weight

0.139332 oz

Maximum Positive Gate Source Voltage (V)

30

Maximum Diode Forward Voltage (V)

1.5

Operating Junction Temperature (°C)

150

Техническая документация

Datasheet STD2LN60K3 , pdf , 1076 КБ
Datasheet , pdf , 1052 КБ