IRFR1N60APBF, Транзистор N-MOSFET, полевой, 600В, 0,89А, 36Вт, DPAK, Vishay - характеристики, поставщики, цена.

Последняя цена 180 руб.

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Полупроводники\Транзисторы\Транзисторы униполярные\Транзисторы с каналом типа N\Транзисторы с каналом N SMD

N-канал 600 В 1,4 A (Tc) 36 Вт (Tc) D-Pak для поверхностного монтажа

Информация

Производитель

Vishay

Артикул

IRFR1N60APBF

Категория

Полевые с управляющим PN-переходом (JFETs)

Номенклатурный номер

2088714

Технические параметры

Вес, г

1.5

Mounting Type

Surface Mount

Channel Type

Pin Count

Configuration

Single

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

Part Status

Active

HTS

8542.39.00.01

Package Length

6.73(Max)

Package Width

6.22(Max)

PCB changed

Package Height

2.39(Max)

Mounting

Surface Mount

Maximum Drain Source Voltage (V)

600

Maximum Power Dissipation (mW)

36000

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Automotive

Supplier Package

DPAK

Standard Package Name

TO-252

Military

Base Product Number

IRFR1 ->

Drain to Source Voltage (Vdss)

600V

ECCN

EAR99

FET Type

N-Channel

HTSUS

8541.29.0095

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Operating Temperature

-55В°C ~ 150В°C (TJ)

Package

Tube

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status

ROHS3 Compliant

Supplier Device Package

D-Pak

Current - Continuous Drain (Id) @ 25В°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Input Capacitance (Ciss) (Max) @ Vds

229pF @ 25V

Power Dissipation (Max)

36W (Tc)

Rds On (Max) @ Id, Vgs

7Ohm @ 840mA, 10V

Technology

MOSFET (Metal Oxide)

Vgs (Max)

В±30V

Vgs(th) (Max) @ Id

4V @ 250ВµA

Number of Elements per Chip

Channel Mode

Enhancement

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Product Category

Power MOSFET

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

1.4

Maximum Drain Source Resistance (mOhm)

7000@10V

Typical Gate Charge @ Vgs (nC)

14(Max)@10V

Typical Gate Charge @ 10V (nC)

14(Max)

Typical Input Capacitance @ Vds (pF)

229@25V

Typical Fall Time (ns)

Typical Rise Time (ns)

Typical Turn-Off Delay Time (ns)

Typical Turn-On Delay Time (ns)

9.8

Tab

Maximum Gate Threshold Voltage (V)

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

Техническая документация

IRFR1N60 , pdf , 270 КБ
Datasheet , pdf , 274 КБ

IRFR1N60APBF, Транзистор N-MOSFET, полевой, 600В, 0,89А, 36Вт, DPAK - характеристики, поставщики

Последняя цена 180 руб.

Техническая документация