IRF6623, Infineon Technologies - характеристики, поставщики, цена.

Последняя цена 320 руб.

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Описание

МОП-транзистор

N-Channel 20V 16A (Ta), 55A (Tc) 1.4W (Ta), 42W (Tc) Surface Mount DIRECTFETв„ў ST

Информация

Производитель

Infineon Technologies

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1667731

Технические параметры

Series

HEXFETВ® ->

Current - Continuous Drain (Id) @ 25В°C

16A (Ta), 55A (Tc)

Drain to Source Voltage (Vdss)

20V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

ECCN

EAR99

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

HTSUS

8541.29.0095

Input Capacitance (Ciss) (Max) @ Vds

1360pF @ 10V

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Mounting Type

Surface Mount

Operating Temperature

-40В°C ~ 150В°C (TJ)

Package

Tape & Reel (TR)Cut Tape (CT)

Package / Case

DirectFETв„ў Isometric ST

Power Dissipation (Max)

1.4W (Ta), 42W (Tc)

Rds On (Max) @ Id, Vgs

5.7mOhm @ 15A, 10V

REACH Status

REACH Unaffected

RoHS Status

RoHS non-compliant

Supplier Device Package

DIRECTFETв„ў ST

Technology

MOSFET (Metal Oxide)

Vgs (Max)

В±20V

Vgs(th) (Max) @ Id

2.2V @ 250ВµA

Техническая документация

Datasheet IRF6623 , pdf , 163 КБ

IRF6623 - характеристики, поставщики

Последняя цена 320 руб.

Техническая документация