Транзисторы и сборки MOSFET
кол-во в упаковке: 50, корпус: TO263, АБ
MOSFET, N, 200V, 17A, D2-PAK Transistor Type MOSFET Transistor Polarity N Voltage, Vds Typ 200V Current, Id Cont 17A Resistance, Rds On 0.18ohm Voltage, Vgs Rds on Measurement 5V Voltage, Vgs th Typ 2V Case Style D2-PAK Termination Type SMD Alternate Case Style D2-PAK Avalanche Single Pulse Energy Eas 580mJ Current Iar 10A Current, Idm Pulse 68A Current, Idss Max 25µA External Depth 15.49mm External Length / Height 4.69mm Max Repetitive Avalanche Energy 13mJ N-channel Gate Charge 66nC Power Dissipation 125W Power Dissipation, on 1 Sq. PCB 3.1W Power, Pd 125W SMD Marking L640S Temperature, Current 25°C Temperature, Full Power Rating 25°C Temperature, Tj Max 150°C Temperature, Tj Min -55°C Thermal Resistance, Junction to Case A 1.0°C/W Time, Fall 52ns Time, Rise 83ns Time, trr Typ 56ns Transistors, No. of 1 Typ Capacitance Ciss 1800pF Voltage, Vds 200V Voltage, Vds Max 200V Voltage, Vgs Rds N Channel 5V Voltage, Vgs th Max 2V Voltage, Vgs th Min 1V
Корпус TO263, Конфигурация и полярность N, Максимальное напряжение сток-исток 200 В, Ток стока номинальный при 25°C, без учета ограничений корпуса 68 А
