MD1802FX - характеристики, поставщики

MD1802FX

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MD1802FX

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Описание

Транзисторы и сборки биполярные

кол-во в упаковке: 30, корпус: ISOWATT218FX

Корпус ISOWATT218FX

Информация

Производитель

ST Microelectronics

Категория

Биполярные (BJTs)

Номенклатурный номер

1615453

Технические параметры

Вес, г

7.572

Package / Case

ISOWATT-218FX-3

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

Number of Elements per Chip

1

Length

26.7 mm

Brand

STMicroelectronics

Minimum Operating Temperature

- 65 C

Width

15.7 mm

Maximum DC Collector Current

10 A

Height

14.7 mm

Pin Count

3

Minimum DC Current Gain

5.5@5A@5V

Pd - Power Dissipation

57000 mW

Series

MD1802FX

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

Part Status

Active

HTS

8541.29.00.95

Type

NPN

Product Category

Bipolar Power

Material

Si

Configuration

Single

Maximum Collector-Emitter Voltage (V)

1500

Maximum Emitter Base Voltage (V)

9

Maximum Base Emitter Saturation Voltage (V)

1.2@1.25A@5A

Maximum Collector-Emitter Saturation Voltage (V)

1.5@1.25A@5A

Maximum DC Collector Current (A)

10

Maximum Power Dissipation (mW)

57000

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Packaging

Tube

Automotive

No

Standard Package Name

ISOWATT218

Supplier Package

ISOWATT218FX

Military

No

Mounting

Through Hole

Package Height

16.5(Max)

Package Length

15.7(Max)

Package Width

5.7(Max)

PCB changed

3

Tab

Tab

Manufacturer

STMicroelectronics

Collector- Base Voltage VCBO

9 V

Collector- Emitter Voltage VCEO Max

700 V

Continuous Collector Current

10 A

DC Collector/Base Gain Hfe Min

5.5 at 5 A, 5 V

DC Current Gain HFE Max

8.5

Emitter- Base Voltage VEBO

9 V

Factory Pack Quantity

300

Mounting Style

Through Hole

Product Type

BJTs - Bipolar Transistors

Subcategory

Transistors

Technology

Si

Техническая документация

MD1802FX , pdf , 211 КБ
Datasheet MD1802FX , pdf , 203 КБ
Datasheet , pdf , 201 КБ