STP21NM60ND, ST Microelectronics - характеристики, поставщики, цена.

Последняя цена 330 руб.

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Информация

Производитель

ST Microelectronics

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1481540

Технические параметры

Вес, г

2.75

Pin Count

Number of Elements per Chip

Channel Mode

Enhancement

Channel Type

Configuration

Single

ECCN (US)

EAR99

EU RoHS

Compliant with Exemption

Lead Shape

Through Hole

Maximum Continuous Drain Current (A)

Maximum Drain Source Resistance (mOhm)

220@10V

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±25

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation (mW)

140000

Minimum Operating Temperature (°C)

-55

Mounting

Through Hole

Packaging

Tube

Part Status

LTB

PCB changed

Product Category

Power MOSFET

Standard Package Name

TO-220

Supplier Package

TO-220

Typical Input Capacitance @ Vds (pF)

1800@50V

Typical Gate Charge @ Vgs (nC)

60@10V

Typical Gate Charge @ 10V (nC)

Typical Fall Time (ns)

Typical Rise Time (ns)

Typical Turn-Off Delay Time (ns)

Typical Turn-On Delay Time (ns)

Automotive

Military

Package Height

9.15(Max)

Package Length

10.4(Max)

Package Width

4.6(Max)

Tab

Process Technology

FDmesh II

Maximum Gate Threshold Voltage (V)

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

Техническая документация

Datasheet STP21NM60ND , pdf , 1398 КБ

STP21NM60ND - характеристики, поставщики

Последняя цена 330 руб.

Техническая документация