CSD17306Q5A, Texas Instruments - характеристики, поставщики, цена.

Последняя цена 290 руб.

Сравнить

Информация

Производитель

Texas Instruments

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1432183

Технические параметры

Вес, г

0.2

Pin Count

Continuous Drain Current (Id) @ 25В°C

24A

Power Dissipation-Max (Ta=25В°C)

3.2W

Rds On - Drain-Source Resistance

3.7mО© @ 22A,8V

Transistor Polarity

N Channel

Vds - Drain-Source Breakdown Voltage

30V

Vgs - Gate-Source Voltage

1.6V @ 250uA

Number of Elements per Chip

Channel Mode

Enhancement

Channel Type

Configuration

Single Quad Drain Triple Source

ECCN (US)

EAR99

EU RoHS

Compliant with Exemption

Maximum Continuous Drain Current (A)

Maximum Drain Source Resistance (mOhm)

3.7@8V

Maximum Drain Source Voltage (V)

Maximum Gate Source Voltage (V)

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation (mW)

3200

Minimum Operating Temperature (°C)

-55

Mounting

Surface Mount

Packaging

Tape and Reel

Part Status

Active

PCB changed

Product Category

Power MOSFET

Standard Package Name

SON

Supplier Package

VSONP EP

Typical Input Capacitance @ Vds (pF)

1670@15V

HTS

8541.29.00.95

Typical Gate Charge @ Vgs (nC)

11.8@4.5V

Typical Fall Time (ns)

6.4

Typical Rise Time (ns)

13.1

Typical Turn-Off Delay Time (ns)

18.4

Typical Turn-On Delay Time (ns)

7.8

Automotive

Military

Package Height

Package Length

4.9

Package Width

5.75

Process Technology

NexFET

Техническая документация

Datasheet , pdf , 355 КБ

CSD17306Q5A - характеристики, поставщики

Последняя цена 290 руб.

Техническая документация