D45VH10G, ON Semiconductor - характеристики, поставщики, цена.

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Описание

Транзисторы и сборки биполярные

кол-во в упаковке: 50, корпус: TO220AB, АБ

TRANSISTOR, PNP, TO-220; Transistor Type: Bipolar; Transistor Polarity: Dual P; Voltage, Vceo: 80V; Current, Ic Continuous a Max: 15A; Voltage, Vce Sat Max: 1V; Power Dissipation: 83W; Hfe, Min: 20; ft, Typ: 50MHz; Case Style: TO-220AB; Termination Type: Through Hole
Корпус TO220AB, Тип проводимости и конфигурация PNP, Рассеиваемая мощность 83 Вт, Напряжение КЭ максимальное 80 В, Ток коллектора 15 А, Коэффициент усиления по току, min 20

Информация

Производитель

ON Semiconductor

Категория

Биполярные (BJTs)

Номенклатурный номер

1198150

Технические параметры

Вес, г

2.7

Base Product Number

D45VH10 ->

Current - Collector (Ic) (Max)

15A

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 4A, 1V

ECCN

EAR99

Frequency - Transition

50MHz

HTSUS

8541.29.0075

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Through Hole

Operating Temperature

-55В°C ~ 150В°C (TJ)

Package

Tube

Package / Case

TO-220-3

Power - Max

83W

REACH Status

REACH Unaffected

RoHS Status

ROHS3 Compliant

Supplier Device Package

TO-220AB

Transistor Type

PNP

Vce Saturation (Max) @ Ib, Ic

1V @ 800mA, 8A

Voltage - Collector Emitter Breakdown (Max)

80V

Maximum Collector Emitter Saturation Voltage

1.5 V

Maximum Operating Temperature

+150 °C

Maximum Operating Frequency

20 MHz

Number of Elements per Chip

Length

10.28mm

Transistor Configuration

Single

Brand

ON Semiconductor

Maximum Collector Emitter Voltage

80 V

Package Type

TO-220AB

Maximum Power Dissipation

83 W

Minimum Operating Temperature

-55 °C

Width

4.82mm

Maximum DC Collector Current

15 A

Height

15.75mm

Pin Count

Dimensions

10.28 x 4.82 x 15.75mm

Maximum Emitter Base Voltage

7 V

Minimum DC Current Gain

Collector-Emitter Breakdown Voltage

80V

Pd - Power Dissipation

83W

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

Part Status

Active

HTS

8541.29.00.95

Type

PNP

Product Category

Bipolar Power

Material

Configuration

Single

Maximum Collector-Emitter Voltage (V)

Maximum Emitter Base Voltage (V)

Maximum Base Emitter Saturation Voltage (V)

1@0.4A@8A|1.5@0.4A@8A

Maximum Collector-Emitter Saturation Voltage (V)

1@0.8A@8A|1.5@3A@15A

Maximum DC Collector Current (A)

Maximum Power Dissipation (mW)

83000

Maximum Transition Frequency (MHz)

50(Typ)

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Packaging

Tube

Standard Package Name

TO-220

Supplier Package

TO-220AB

Military

Mounting

Through Hole

Package Height

9.28(Max)

Package Length

10.53(Max)

Package Width

4.83(Max)

PCB changed

Tab

Lead Shape

Through Hole

Maximum Base Emitter Saturation Voltage

1.5 V

Техническая документация

Datasheet , pdf , 241 КБ
Datasheet D45VH10G , pdf , 208 КБ
Datasheet , pdf , 90 КБ

D45VH10G - характеристики, поставщики

Последняя цена 43 руб.

Техническая документация