IXFX64N50P, Транзистор N-MOSFET, 500В, 64А, 830Вт, PLUS247™, Ixys Corporation - характеристики, поставщики, цена.

Последняя цена 1930 руб.

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Информация

Производитель

Ixys Corporation

Артикул

IXFX64N50P

Категория

Полевые с управляющим PN-переходом (JFETs)

Номенклатурный номер

2141815

Технические параметры

Вес, г

Maximum Operating Temperature

+ 150 C

Length

16.13 mm

Brand

IXYS

Minimum Operating Temperature

- 55 C

Height

21.34 mm

Width

5.21 mm

Configuration

Single

Packaging

Tube

Package / Case

PLUS247-3

Type

PolarHV HiPerFET Power MOSFET

Technology

Series

IXFX64N50

Channel Mode

Enhancement

Typical Turn-On Delay Time

30 ns

Typical Turn-Off Delay Time

85 ns

Rds On - Drain-Source Resistance

85 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

500 V

Vgs - Gate-Source Voltage

10 V

Product Category

MOSFET

Pd - Power Dissipation

830 W

Factory Pack Quantity

Fall Time

22 ns

Id - Continuous Drain Current

64 A

Manufacturer

IXYS

Mounting Style

Through Hole

Number Of Channels

1 Channel

Product Type

MOSFET

Qg - Gate Charge

150 nC

Rise Time

25 ns

Subcategory

MOSFETs

Tradename

HiPerFET

Transistor Type

1 N-Channel

Vgs Th - Gate-Source Threshold Voltage

3 V

Unit Weight

0.056438 oz

Forward Transconductance - Min

30 S

IXFX64N50P, Транзистор N-MOSFET, 500В, 64А, 830Вт, PLUS247™ - характеристики, поставщики

Последняя цена 1930 руб.