IRFR1N60APBF, Транзистор MOSFET N-CH 600V 1.4A [D-PAK], Vishay - характеристики, поставщики, цена.

Последняя цена 46 руб.

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Информация

Производитель

Vishay

Артикул

IRFR1N60APBF

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1773118

Технические параметры

Вес, г

0.6

Pin Count

Number of Elements per Chip

Channel Mode

Enhancement

Channel Type

Configuration

Single

ECCN (US)

EAR99

EU RoHS

Compliant with Exemption

Maximum Continuous Drain Current (A)

1.4

Maximum Drain Source Resistance (mOhm)

7000@10V

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation (mW)

36000

Minimum Operating Temperature (°C)

-55

Mounting

Surface Mount

Part Status

Active

PCB changed

Product Category

Power MOSFET

Standard Package Name

TO-252

Supplier Package

DPAK

Typical Input Capacitance @ Vds (pF)

229@25V

HTS

8542.39.00.01

Typical Gate Charge @ Vgs (nC)

14(Max)@10V

Typical Gate Charge @ 10V (nC)

14(Max)

Typical Fall Time (ns)

Typical Rise Time (ns)

Typical Turn-Off Delay Time (ns)

Typical Turn-On Delay Time (ns)

9.8

Automotive

Military

Package Height

2.39(Max)

Package Length

6.73(Max)

Package Width

6.22(Max)

Tab

Maximum Gate Threshold Voltage (V)

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

Техническая документация

IRFR1N60 , pdf , 270 КБ
Datasheet , pdf , 274 КБ

IRFR1N60APBF, Транзистор MOSFET N-CH 600V 1.4A [D-PAK] - характеристики, поставщики

Последняя цена 46 руб.

Техническая документация