IPP052NE7N3GXKSA1, Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220 Tube, Infineon Technologies - характеристики, поставщики, цена.

Последняя цена 124 руб.

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Описание

Semiconductor - Discrete > Transistors > FET - MOSFET

N-канал 75V 80A (Tc) 150W (Tc) сквозное отверстие PG-TO220-3-1

Информация

Производитель

Infineon Technologies

Артикул

IPP052NE7N3GXKSA1

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

2410195

Технические параметры

Series

OptiMOSв„ў ->

Base Product Number

IPP052 ->

Current - Continuous Drain (Id) @ 25В°C

80A (Tc)

Drain to Source Voltage (Vdss)

75V

Drive Voltage (Max Rds On, Min Rds On)

10V

ECCN

EAR99

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

HTSUS

8541.29.0095

Input Capacitance (Ciss) (Max) @ Vds

4750pF @ 37.5V

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Through Hole

Operating Temperature

-55В°C ~ 175В°C (TJ)

Package

Tube

Package / Case

TO-220-3

Power Dissipation (Max)

150W (Tc)

Rds On (Max) @ Id, Vgs

5.2mOhm @ 80A, 10V

REACH Status

REACH Unaffected

RoHS Status

ROHS3 Compliant

Supplier Device Package

PG-TO220-3-1

Technology

MOSFET (Metal Oxide)

Vgs (Max)

В±20V

Vgs(th) (Max) @ Id

3.8V @ 91ВµA

Continuous Drain Current (Id) @ 25В°C

80A(Tc)

Power Dissipation-Max (Ta=25В°C)

150W(Tc)

Rds On - Drain-Source Resistance

Transistor Polarity

N Channel

Vds - Drain-Source Breakdown Voltage

75V

Vgs - Gate-Source Voltage

3.8V @ 91uA

Техническая документация

Datasheet IPP052NE7N3GXKSA1 , pdf , 845 КБ
Datasheet IPP052NE7N3GXKSA1 , pdf , 836 КБ

IPP052NE7N3GXKSA1, Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220 Tube - характеристики, поставщики

Последняя цена 124 руб.

Техническая документация