IPP030N10N3 G, Транзистор, Infineon Technologies - характеристики, поставщики, цена.

Последняя цена 700 руб.

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Описание

Полевые МОП-транзисторы Infineon OptiMOS ™ 3, 100 В и более

Информация

Производитель

Infineon Technologies

Артикул

IPP030N10N3 G

P/N

IPP030N10N3G

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1810421

Технические параметры

Вес, г

1.25

Maximum Operating Temperature

+175 °C

Package Type

TO-220

Transistor Material

Length

10.36mm

Brand

Infineon

Series

OptiMOS 3

Pin Count

Typical Gate Charge @ Vgs

155 nC @ 10 V

Maximum Gate Source Voltage

-20 V, +20 V

Mounting Type

Through Hole

Transistor Configuration

Single

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

Number of Elements per Chip

Maximum Continuous Drain Current

100 A

Maximum Power Dissipation

300 W

Minimum Operating Temperature

-55 °C

Width

4.57mm

Height

15.95mm

Maximum Drain Source Resistance

4.8 mΩ

Maximum Drain Source Voltage

100 V

Channel Mode

Enhancement

Channel Type

Forward Diode Voltage

1.2V

Forward Transconductance

188s

Dimensions

10.36 x 4.57 x 15.95mm

Typical Turn-On Delay Time

34 ns

Typical Turn-Off Delay Time

84 ns

IPP030N10N3 G, Транзистор - характеристики, поставщики

Последняя цена 700 руб.