IPB039N10N3GATMA1, Силовой МОП-транзистор, N Канал, 100 В, 160 А, 0.0033 Ом, TO-263 (D2PAK), Surface Mount
The IPB039N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
• Excellent switching performance• World's lowest RDS (ON)• Very low Qg and Qgd• Excellent gate charge x RDS (ON) product (FOM)• Environmentally friendly• Highest power density• Less paralleling required• Smallest board-space consumption• Easy-to-design products• Halogen-free, Green device• MSL1 rated 2
