FIR10N65FG, Транзистор N-Channel 650V 10A(Tc) 4V @ 250uA 1 @ 5A,10V 50W(Tc) [TO-220F] - характеристики, поставщики

FIR10N65FG, Транзистор N-Channel 650V 10A(Tc) 4V @ 250uA 1 @ 5A,10V 50W(Tc) [TO-220F]

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Производитель

First Semicon

Артикул

FIR10N65FG

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1744473

Вес, г

2.5

Continuous Drain Current (Id) @ 25В°C

10A(Tc)

Power Dissipation-Max (Ta=25В°C)

50W(Tc)

Rds On - Drain-Source Resistance

1О© @ 5A,10V

Transistor Polarity

N Channel

Vds - Drain-Source Breakdown Voltage

650V

Vgs - Gate-Source Voltage

4V @ 250uA