DMT10H010LCT, Trans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube, Diodes Incorporated - характеристики, поставщики, цена.

Последняя цена 108 руб.

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Описание

Semiconductor - Discrete > Transistors > FET - MOSFET

N-канал 100V 98A (Tc) 2W (Ta), 139W (Tc) сквозное отверстие TO-220AB

Информация

Производитель

Diodes Incorporated

Артикул

DMT10H010LCT

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

2412550

Технические параметры

Base Product Number

DMT10 ->

Current - Continuous Drain (Id) @ 25В°C

98A (Tc)

Drain to Source Voltage (Vdss)

100V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

ECCN

EAR99

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

71nC @ 10V

HTSUS

8541.29.0095

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 50V

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Through Hole

Operating Temperature

-55В°C ~ 175В°C (TJ)

Package

Tube

Package / Case

TO-220-3

Power Dissipation (Max)

2W (Ta), 139W (Tc)

Rds On (Max) @ Id, Vgs

9.5mOhm @ 13A, 10V

REACH Status

REACH Affected

RoHS Status

ROHS3 Compliant

Supplier Device Package

TO-220AB

Technology

MOSFET (Metal Oxide)

Vgs (Max)

В±20V

Vgs(th) (Max) @ Id

3V @ 250ВµA

Техническая документация

Datasheet DMT10H010LCT , pdf , 547 КБ

DMT10H010LCT, Trans MOSFET N-CH 100V 98A 3-Pin(3+Tab) TO-220AB Tube - характеристики, поставщики

Последняя цена 108 руб.

Техническая документация