BUK7Y8R7-60EX, Силовой МОП-транзистор, N Канал, 60 В, 87 А, 0.00527 Ом, SOT-669, Surface Mount
The BUK7Y8R7-60E is a N-channel standard level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
• Repetitive avalanche rated• Suitable for thermally demanding environments due to 175°C rating• True standard level gate with VGS (th) rating of greater than 1V at 175°C
