BSV236SPH6327XTSA1, Trans MOSFET P-CH 20V 1.5A Automotive 6-Pin SOT-363 T/R, Infineon Technologies - характеристики, поставщики, цена.

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Описание

Semiconductor - Discrete > Transistors > FET - MOSFET

P-канал 20V 1.5A (Ta) 560mW (Ta) поверхностный монтаж PG-SOT363-6

Информация

Производитель

Infineon Technologies

Артикул

BSV236SPH6327XTSA1

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1992185

Технические параметры

Series

OptiMOSв„ў ->

Base Product Number

BSV236 ->

Current - Continuous Drain (Id) @ 25В°C

1.5A (Ta)

Drain to Source Voltage (Vdss)

20V

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

ECCN

EAR99

FET Type

P-Channel

Gate Charge (Qg) (Max) @ Vgs

5.7nC @ 4.5V

HTSUS

8541.21.0095

Input Capacitance (Ciss) (Max) @ Vds

228pF @ 15V

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Surface Mount

Operating Temperature

-55В°C ~ 150В°C (TJ)

Package

Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®

Package / Case

6-VSSOP, SC-88, SOT-363

Power Dissipation (Max)

560mW (Ta)

Rds On (Max) @ Id, Vgs

175mOhm @ 1.5A, 4.5V

REACH Status

REACH Unaffected

RoHS Status

ROHS3 Compliant

Supplier Device Package

PG-SOT363-6

Technology

MOSFET (Metal Oxide)

Vgs (Max)

В±12V

Vgs(th) (Max) @ Id

1.2V @ 8ВµA

Continuous Drain Current (Id) @ 25В°C

1.5A

Power Dissipation-Max (Ta=25В°C)

560mW

Rds On - Drain-Source Resistance

Transistor Polarity

P Channel

Vds - Drain-Source Breakdown Voltage

20V

Vgs - Gate-Source Voltage

1.2V @ 8uA

Техническая документация

Datasheet BSV236SPH6327XTSA1 , pdf , 129 КБ
Datasheet , pdf , 152 КБ

BSV236SPH6327XTSA1, Trans MOSFET P-CH 20V 1.5A Automotive 6-Pin SOT-363 T/R - характеристики, поставщики

Последняя цена 11 руб.

Техническая документация