BSS127SSN-7, Транзистор MOSFET N-CH 600В 50мА [SC-59], Diodes Incorporated - характеристики, поставщики, цена.

Последняя цена 21 руб.

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Описание

N-канальный полевой МОП-транзистор, от 100 до 950 В, Diodes Inc.

Информация

Производитель

Diodes Incorporated

Артикул

BSS127SSN-7

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1759796

Технические параметры

Вес, г

0.2

Pin Count

Number of Elements per Chip

Channel Mode

Enhancement

Channel Type

Configuration

Single

ECCN (US)

EAR99

EU RoHS

Compliant

Lead Shape

Gull-wing

Maximum Continuous Drain Current (A)

0.07

Maximum Drain Source Resistance (mOhm)

160@10V

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±20

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation (mW)

1250

Minimum Operating Temperature (°C)

-55

Mounting

Surface Mount

Packaging

Tape and Reel

Part Status

Active

PCB changed

Product Category

Power MOSFET

Standard Package Name

Supplier Package

SC-59

Typical Input Capacitance @ Vds (pF)

21.8@25V

HTS

8541.29.00.95

Typical Gate Charge @ Vgs (nC)

1.08@10V

Typical Gate Charge @ 10V (nC)

1.08

Typical Fall Time (ns)

168

Typical Rise Time (ns)

7.2

Typical Turn-Off Delay Time (ns)

28.7

Typical Turn-On Delay Time (ns)

Automotive

Military

Package Height

1.1

Package Length

Package Width

1.6

Maximum Gate Threshold Voltage (V)

4.5

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

0.1

Maximum Positive Gate Source Voltage (V)

Maximum Diode Forward Voltage (V)

1.5

Operating Junction Temperature (°C)

-55 to 150

Техническая документация

BSS127 , pdf , 354 КБ
Datasheet BSS127SSN-7 , pdf , 642 КБ
Datasheet BSS127SSN-7 , pdf , 353 КБ

BSS127SSN-7, Транзистор MOSFET N-CH 600В 50мА [SC-59] - характеристики, поставщики

Последняя цена 21 руб.

Техническая документация