D45VH10G, Транзистор p-n-p 100В 15A TO220 - характеристики, поставщики

D45VH10G, Транзистор p-n-p 100В 15A TO220

Последняя цена 220 руб.

D45VH10G, Транзистор p-n-p 100В 15A TO220

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Описание

Силовые транзисторы PNP, ON Semiconductor

Информация

Производитель

ON Semiconductor

Артикул

D45VH10G

Категория

Измерительная техника

Номенклатурный номер

2196198

Технические параметры

Вес, г

2.01

Brand

ON Semiconductor

ECCN

EAR99

HTSUS

8541.29.0075

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Through Hole

Package

Tube

REACH Status

REACH Unaffected

RoHS Status

ROHS3 Compliant

Type

PNP

Maximum Operating Temperature

+150 °C

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

Part Status

Active

HTS

8541.29.00.95

Mounting

Through Hole

Dimensions

10.28 x 4.82 x 15.75mm

Length

10.28mm

Base Product Number

D45VH10 ->

Material

Si

Operating Temperature

-55В°C ~ 150В°C (TJ)

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Packaging

Tube

Minimum Operating Temperature

-55 °C

Configuration

Single

Number of Elements per Chip

1

Package Type

TO-220AB

Width

4.82mm

Pin Count

3

Transistor Configuration

Single

Maximum Operating Frequency

20 MHz

Maximum Collector Emitter Voltage

80 V

Maximum Emitter Base Voltage

7 V

Current - Collector (Ic) (Max)

15A

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 4A, 1V

Frequency - Transition

50MHz

Power - Max

83W

Transistor Type

PNP

Vce Saturation (Max) @ Ib, Ic

1V @ 800mA, 8A

Voltage - Collector Emitter Breakdown (Max)

80V

Collector-Emitter Breakdown Voltage

80V

Maximum DC Collector Current

15 A

Pd - Power Dissipation

83W

Maximum Power Dissipation

83 W

Height

15.75mm

Standard Package Name

TO-220

Supplier Package

TO-220AB

Package Height

9.28(Max)

Package Length

10.53(Max)

Package Width

4.83(Max)

PCB changed

3

Lead Shape

Through Hole

Military

No

Maximum Power Dissipation (mW)

83000

Tab

Tab

Product Category

Bipolar Power

Maximum Collector-Emitter Voltage (V)

80

Maximum Emitter Base Voltage (V)

7

Maximum Base Emitter Saturation Voltage (V)

1@0.4A@8A|1.5@0.4A@8A

Maximum Collector-Emitter Saturation Voltage (V)

1@0.8A@8A|1.5@3A@15A

Maximum DC Collector Current (A)

15

Minimum DC Current Gain

20

Maximum Transition Frequency (MHz)

50(Typ)

Maximum Collector Emitter Saturation Voltage

1.5 V

Maximum Base Emitter Saturation Voltage

1.5 V

Техническая документация

Datasheet , pdf , 241 КБ
Datasheet D45VH10G , pdf , 208 КБ
Datasheet , pdf , 90 КБ
Datasheet , pdf , 99 КБ