DMP2240UDM-7, Транзистор P-MOSFET x2, полевой, -20В, -1,5А, 0,6Вт, SOT26 - характеристики, поставщики

DMP2240UDM-7, Транзистор P-MOSFET x2, полевой, -20В, -1,5А, 0,6Вт, SOT26

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DMP2240UDM-7, Транзистор P-MOSFET x2, полевой, -20В, -1,5А, 0,6Вт, SOT26

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Описание

Dual P-Channel MOSFET, Diodes Inc.

Информация

Производитель

Diodes Incorporated

Артикул

DMP2240UDM-7

Категория

Измерительная техника

Номенклатурный номер

2182959

Технические параметры

Вес, г

0.02

Максимальная рабочая температура

+150 °C

Brand

DiodesZetex

ECCN

EAR99

HTSUS

8541.21.0095

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Surface Mount

Package

Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®

REACH Status

REACH Unaffected

RoHS Status

ROHS3 Compliant

Maximum Operating Temperature

+150 °C

EU RoHS

Compliant

ECCN (US)

EAR99

Part Status

Active

HTS

8541.21.00.95

Mounting

Surface Mount

Ширина

1.7мм

Длина

3.1мм

Length

3.1mm

Base Product Number

DMP2240 ->

Высота

1.3мм

Operating Temperature

-65В°C ~ 150В°C (TJ)

Package / Case

SOT-23-6

Supplier Device Package

SOT-26

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Packaging

Tape and Reel

Minimum Operating Temperature

-65 °C

Configuration

Dual

Number of Elements per Chip

2

Package Type

SOT-26

Width

1.7mm

Pin Count

6

Transistor Configuration

Isolated

Тип корпуса

SOT-26

Число контактов

6

Power - Max

600mW

Maximum Continuous Drain Current

2 A

Maximum Power Dissipation

600 mW

Maximum Gate Threshold Voltage

1V

Maximum Drain Source Resistance

240 mΩ

Maximum Drain Source Voltage

20 V

Transistor Material

Si

Channel Mode

Enhancement

Channel Type

P

Maximum Gate Source Voltage

-12 V, +12 V

Current - Continuous Drain (Id) @ 25В°C

2A

Drain to Source Voltage (Vdss)

20V

FET Type

2 P-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds

320pF @ 16V

Rds On (Max) @ Id, Vgs

150mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250ВµA

Height

1.3mm

Материал транзистора

Кремний

Максимальное пороговое напряжение включения

1V

Continuous Drain Current (Id) @ 25В°C

2A

Power Dissipation-Max (Ta=25В°C)

600mW

Rds On - Drain-Source Resistance

150mО© @ 2A,4.5V

Transistor Polarity

2 P Channel(Double)

Vds - Drain-Source Breakdown Voltage

20V

Vgs - Gate-Source Voltage

1V @ 250uA

Standard Package Name

SOT

Supplier Package

SOT-26

Package Height

1.1

Package Length

3

Package Width

1.6

PCB changed

6

Lead Shape

Gull-wing

Automotive

Yes

Military

No

Maximum Power Dissipation (mW)

600

Product Category

Small Signal

Maximum Drain Source Voltage (V)

20

Maximum Gate Source Voltage (V)

±12

Maximum Continuous Drain Current (A)

2

Maximum Drain Source Resistance (mOhm)

150@4.5V

Typical Input Capacitance @ Vds (pF)

320@16V

Typical Fall Time (ns)

27.54

Typical Rise Time (ns)

12.09

Typical Turn-Off Delay Time (ns)

55.34

Typical Turn-On Delay Time (ns)

11.51

AEC Qualified Number

AEC-Q101

FET Feature

Logic Level Gate

Техническая документация

Datasheet , pdf , 163 КБ
Datasheet DMP2240UDM-7 , pdf , 156 КБ