IPD060N03LGATMA1, Транзистор N-MOSFET 30В 50A [TO-252-3], Infineon Technologies - характеристики, поставщики, цена.

Последняя цена 82 руб.

Сравнить

Информация

Производитель

Infineon Technologies

Артикул

IPD060N03LGATMA1

Категория

Полевые (FETs, MOSFETs)

Номенклатурный номер

1772365

Технические параметры

Вес, г

0.6

Pin Count

Number of Elements per Chip

Channel Mode

Enhancement

Channel Type

Configuration

Single

ECCN (US)

EAR99

EU RoHS

Compliant with Exemption

Maximum Continuous Drain Current (A)

Maximum Drain Source Resistance (mOhm)

6@10V

Maximum Drain Source Voltage (V)

Maximum Gate Source Voltage (V)

±20

Maximum Operating Temperature (°C)

175

Maximum Power Dissipation (mW)

56000

Minimum Operating Temperature (°C)

-55

Mounting

Surface Mount

Packaging

Tape and Reel

Part Status

Active

PCB changed

Product Category

Power MOSFET

Standard Package Name

TO-252

Supplier Package

DPAK

Typical Input Capacitance @ Vds (pF)

1700@15V

HTS

8541.29.00.95

Typical Gate Charge @ Vgs (nC)

22@10V|10.8@4.5V

Typical Gate Charge @ 10V (nC)

Typical Fall Time (ns)

Typical Rise Time (ns)

Typical Turn-Off Delay Time (ns)

Typical Turn-On Delay Time (ns)

Automotive

Military

Package Height

2.3

Package Length

6.5

Package Width

6.22

Tab

Process Technology

OptiMOS

Техническая документация

Datasheet , pdf , 534 КБ
Datasheet IPD060N03L G , pdf , 997 КБ
Datasheet IPD060N03LGATMA1 , pdf , 524 КБ

IPD060N03LGATMA1, Транзистор N-MOSFET 30В 50A [TO-252-3] - характеристики, поставщики

Последняя цена 82 руб.

Техническая документация