EE-SB5B, Датчик: отражательный; Шир.диафрагмы: 9,8мм; LIGHT-ON; винт M3, Omron - характеристики, поставщики, цена.

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Описание

Reflective Optical Sensor 0.197" (5mm) PCB Mount

Информация

Производитель

Omron

Артикул

EE-SB5B

Категория

Измерительная техника

Номенклатурный номер

2073708

Технические параметры

Вес, г

Brand

Omron Electronics

ECCN

EAR99

HTSUS

8541.40.8000

Moisture Sensitivity Level (MSL)

Not Applicable

Mounting Type

Through Hole

Package

Bulk

RoHS Status

RoHS Compliant

Series

EE-SB5-B

Type

Reflective

Maximum Operating Temperature

+ 80 C

EU RoHS

Compliant

ECCN (US)

EAR99

Part Status

Active

HTS

8541.40.80.00

Mounting

Screw

Length

25.4 mm

Termination Style

PCB

Operating Temperature

-25В°C ~ 80В°C

Package / Case

PCB Mount

Minimum Operating Temperature (°C)

-25

Maximum Operating Temperature (°C)

Minimum Operating Temperature

- 25 C

Width

6.35 mm

Pin Count

Current - Collector (Ic) (Max)

20mA

Voltage - Collector Emitter Breakdown (Max)

30V

Pd - Power Dissipation

100 mW

Height

11.5 mm

Sensing Distance

0.197"" (5mm)

Sensing Method

Reflective

Video File

Photomicrosensor SMD SeriesPhotomicrosensors Small

Output Type

Phototransistor

Package Height

11.5

Package Length

25.4

Package Width

6.35

PCB changed

If - Forward Current

30 mA

Vf - Forward Voltage

1.2 V

Response Time

30Вµs, 30Вµs

Maximum Power Dissipation (mW)

100

Number of Channels per Chip

Product Category

Optical Switches, Reflective, Phototransistor Outp

Peak Wavelength (nm)

850

Maximum Forward Current (mA)

Maximum Collector-Emitter Voltage (V)

Number of Channels

1 Channel

Rise Time

30 us

Product Type

Optical Switches, Reflective, Phototransistor Outp

Current - DC Forward (If) (Max)

50mA

Factory Pack Quantity

Manufacturer

Omron

Mounting Style

Through Hole

Part # Aliases

EE-SB5B EESB5B EESB5BNC

Subcategory

Optical Switches

Vr - Reverse Voltage

4 V

Maximum Reverse Voltage (V)

Maximum Rise Time (ns)

30000(Typ)

Maximum Fall Time (ns)

30000(Typ)

Output Device

Phototransistor

Maximum Collector Current (mA)

Collector- Emitter Voltage VCEO Max

30 V

Fall Time

30 us

Maximum Collector Current

20 mA

Wavelength

940 nm

Техническая документация

Datasheet , pdf , 1433 КБ
Datasheet , pdf , 265 КБ
Datasheet , pdf , 264 КБ
Datasheet , pdf , 272 КБ

EE-SB5B, Датчик: отражательный; Шир.диафрагмы: 9,8мм; LIGHT-ON; винт M3 - характеристики, поставщики

Последняя цена 1140 руб.

Техническая документация